Vishay / Siliconix SIHG22N50D-E3

Product Details

FET Type

N-Channel

Power Dissipation (Max)

300W (Tc)

Packaging

Tube

Supplier Device Package

I2PAK

Vgs (Max)

±16V

Gate Charge (Qg) (Max) @ Vgs

88nC @ 5V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

6200pF @ 25V

Part Status

Obsolete

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Mounting Type

Through Hole

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Base Part Number

STB100N

Vgs(th) (Max) @ Id

2.5V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Series

STripFET™ III

Rds On (Max) @ Id, Vgs

3.2mOhm @ 50A, 10V