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Vishay / Siliconix SIHG24N65EF-GE3

MOSFET N-CH 650V 24A TO247AC

Manufacturer
Vishay / Siliconix
Datasheet
Price
5.96
Stock
496
Description
MOSFET N-CH 650V 24A TO247AC

Product Details

Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
94nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
900V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
2400pF @ 100V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
15A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
3.5V @ 1mA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
340mOhm @ 9.2A, 10V
Series
CoolMOS™
Power Dissipation (Max)
208W (Tc)
FET Type
N-Channel
Supplier Device Package
PG-TO220-3