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Vishay / Siliconix SIHG33N65EF-GE3
MOSFET N-CH 650V 31.6A TO-247AC
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 6.62
- Stock
- 100
- Description
- MOSFET N-CH 650V 31.6A TO-247AC
Product Details
- Series
- -
- Supplier Device Package
- TO-263AA
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 74nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 150V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 3970pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 100A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 4.5V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 11.5mOhm @ 50A, 10V
- Power Dissipation (Max)
- 375W (Tc)