Vishay / Siliconix SIHG70N60AEF-GE3

Product Details

Vgs(th) (Max) @ Id

5V @ 7.6mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

41mOhm @ 38A, 10V

Series

FRFET®, SuperFET® II

Power Dissipation (Max)

595W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-247

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

298nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

650V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

12560pF @ 100V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

76A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-247-4