Vishay / Siliconix SIHH068N60E-T1-GE3

Product Details

Operating Temperature

-55°C ~ 175°C (TJ)

Series

DeepGATE™, STripFET™ VI

Rds On (Max) @ Id, Vgs

1.15mOhm @ 60A, 10V

FET Type

N-Channel

Power Dissipation (Max)

300W (Tc)

Packaging

Digi-Reel®

Supplier Device Package

H2Pak-2

Vgs (Max)

±20V

Gate Charge (Qg) (Max) @ Vgs

404nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

20500pF @ 25V

Part Status

Obsolete

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Mounting Type

Surface Mount

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Base Part Number

STH400

Vgs(th) (Max) @ Id

4.5V @ 250µA