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Vishay / Siliconix SIHH11N65E-T1-GE3
MOSFET N-CHAN 650V 12A POWERPAK
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- MOSFET N-CHAN 650V 12A POWERPAK
Product Details
- Series
- TrenchT2™
- Power Dissipation (Max)
- 517W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-263 (IXTA)
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 120nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 120V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 6570pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 110A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 4.5V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 14mOhm @ 55A, 10V