Vishay / Siliconix SIHH24N65EF-T1-GE3

Product Details

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Mounting Type

Surface Mount

Package / Case

TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

Vgs(th) (Max) @ Id

3.2V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

2.3mOhm @ 100A, 10V

Series

NexFET™

Power Dissipation (Max)

375W (Tc)

FET Type

N-Channel

Supplier Device Package

DDPAK/TO-263-3

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

156nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

80V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

12200pF @ 40V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

200A (Ta)