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Vishay / Siliconix SIHJ10N60E-T1-GE3
MOSFET N-CH 600V 10A POWERPAKSO
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 2.78
- Stock
- 1709
Product Details
- FET Feature
- Super Junction
- Current - Continuous Drain (Id) @ 25°C
- 17A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 3.5V @ 360µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 280mOhm @ 7.2A, 10V
- Series
- CoolMOS™
- Power Dissipation (Max)
- 101W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-TO220-3
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 36nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 800V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1200pF @ 500V