Vishay / Siliconix SIHJ6N65E-T1-GE3

Product Details

Vgs (Max)

±10V

Drain to Source Voltage (Vdss)

80V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

7149pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

5V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

2.1V @ 1mA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

10mOhm @ 20A, 10V

Series

Automotive, AEC-Q101, TrenchMOS™

Power Dissipation (Max)

182W (Tc)

FET Type

N-Channel

Supplier Device Package

D2PAK

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

48.8nC @ 5V