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Vishay / Siliconix SIHP22N60EF-GE3
MOSFET N-CHAN 600V TO-220AB
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 3.33
- Stock
- 50
- Description
- MOSFET N-CHAN 600V TO-220AB
Product Details
- Power Dissipation (Max)
- 156W (Tc)
- Series
- EF
- Supplier Device Package
- TO-220AB
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 32nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 600V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1081pF @ 100V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 18A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 193mOhm @ 9.5A, 10V