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Vishay / Siliconix SIHU6N65E-GE3
MOSFET N-CH 650V 6A IPAK
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- MOSFET N-CH 650V 6A IPAK
Product Details
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 6555pF @ 30V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 100A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 2mOhm @ 50A, 10V
- Series
- Automotive, AEC-Q101
- Power Dissipation (Max)
- 2.3W
- FET Type
- N-Channel
- Supplier Device Package
- PowerDI5060-8
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 130.8nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V