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Vishay / Siliconix SIHU6N80E-GE3
MOSFET N-CHAN 800V TO-251
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 2.22
- Stock
- 2995
- Description
- MOSFET N-CHAN 800V TO-251
Product Details
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 4040pF @ 25V
- Part Status
- Obsolete
- Current - Continuous Drain (Id) @ 25°C
- 80A (Tc)
- Mounting Type
- Through Hole
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Base Part Number
- STU150
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Operating Temperature
- 175°C (TJ)
- Series
- DeepGATE™, STripFET™ VI
- Rds On (Max) @ Id, Vgs
- 3.3mOhm @ 40A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 110W (Tc)
- Packaging
- Tube
- Supplier Device Package
- I-PAK
- Vgs (Max)
- ±20V
- Gate Charge (Qg) (Max) @ Vgs
- 40nC @ 4.5V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 30V