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Vishay / Siliconix SIR166DP-T1-GE3
MOSFET N-CH 30V 40A PPAK SO-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
Product Details
- Vgs(th) (Max) @ Id
- 900mV @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 8.32mOhm @ 14A, 4.5V
- Series
- Automotive, AEC-Q101, TrenchFET®
- Power Dissipation (Max)
- 7.1W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- 8-SOIC
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 151nC @ 4.5V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 12V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 11000pF @ 6V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 25A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)