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Vishay / Siliconix SIR414DP-T1-GE3
MOSFET N-CH 40V 50A PPAK SO-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 2962
- Description
- MOSFET N-CH 40V 50A PPAK SO-8
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Series
- STripFET™
- Rds On (Max) @ Id, Vgs
- 55mOhm @ 2A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 2W (Tc)
- Packaging
- Cut Tape (CT)
- Supplier Device Package
- 8-SO
- Vgs (Max)
- ±20V
- Gate Charge (Qg) (Max) @ Vgs
- 4.7nC @ 5V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 30V
- FET Feature
- Schottky Diode (Isolated)
- Input Capacitance (Ciss) (Max) @ Vds
- 330pF @ 25V
- Part Status
- Obsolete
- Current - Continuous Drain (Id) @ 25°C
- 4.5A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 5V, 10V
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Base Part Number
- STS4D
- Vgs(th) (Max) @ Id
- 1V @ 250µA