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Vishay / Siliconix SIR610DP-T1-RE3
MOSFET N-CH 200V 35.4A SO-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- MOSFET N-CH 200V 35.4A SO-8
Product Details
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 12mOhm @ 13.5A, 10V
- Series
- -
- Power Dissipation (Max)
- 2.2W (Ta), 25W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220AB
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 33.5nC @ 10V
- Vgs (Max)
- ±16V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1925pF @ 30V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 37.2A (Tc)