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Vishay / Siliconix SIR642DP-T1-GE3
MOSFET N-CH 40V 60A PPAK SO-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
- Description
- MOSFET N-CH 40V 60A PPAK SO-8
Product Details
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 1.4nC @ 4.5V
- Vgs (Max)
- ±12V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 75pF @ 15V
- FET Feature
- Schottky Diode (Isolated)
- Current - Continuous Drain (Id) @ 25°C
- 1.8A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- 6-UFDFN Exposed Pad
- Vgs(th) (Max) @ Id
- 1.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 299mOhm @ 1.6A, 4.5V
- Series
- PowerTrench®
- Power Dissipation (Max)
- 1.4W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- 6-MicroFET (1.6x1.6)