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Vishay / Siliconix SIR644DP-T1-GE3
MOSFET N-CH 40V 60A PPAK SO-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
- Description
- MOSFET N-CH 40V 60A PPAK SO-8
Product Details
- Package / Case
- 4-VSFN Exposed Pad
- Vgs(th) (Max) @ Id
- 3.7V @ 600µA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 300mOhm @ 5.8A, 10V
- Series
- DTMOSIV
- Power Dissipation (Max)
- 104W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 4-DFN-EP (8x8)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 25nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 600V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 890pF @ 300V
- FET Feature
- Super Junction
- Current - Continuous Drain (Id) @ 25°C
- 11.5A (Ta)
- Part Status
- Discontinued at Digi-Key
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount