Images are for reference only. See Product Specifications for product details
Vishay / Siliconix SIR774DP-T1-GE3
MOSFET N-CH 30V
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
- Description
- MOSFET N-CH 30V
Product Details
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 13.5mOhm @ 10A, 10V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 1.4W (Ta)
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 20nC @ 5V
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 30V
- Vgs (Max)
- ±20V
- Current - Continuous Drain (Id) @ 25°C
- 7.5A (Ta)
- Technology
- MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- FET Feature
- -
- Part Status
- Obsolete
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)