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Vishay / Siliconix SIR836DP-T1-GE3
MOSFET N-CH 40V 21A PPAK SO-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 3902
Product Details
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 2V @ 380µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 850mOhm @ 3A, 10V
- Series
- SIPMOS®
- Power Dissipation (Max)
- 38W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- PG-TO252-3
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 16nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 372pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 4.2A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V