Images are for reference only. See Product Specifications for product details
Vishay / Siliconix SIR846DP-T1-GE3
MOSFET N-CH 100V 60A PPAK SO-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- MOSFET N-CH 100V 60A PPAK SO-8
Product Details
- FET Type
- N-Channel
- Power Dissipation (Max)
- 4.8W (Ta), 120W (Tc)
- Packaging
- Digi-Reel®
- Supplier Device Package
- PowerFlat™ (5x6)
- Vgs (Max)
- ±20V
- Gate Charge (Qg) (Max) @ Vgs
- 46.8nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 80V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 3435pF @ 40V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 100A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- 8-PowerVDFN
- Base Part Number
- STL100
- Vgs(th) (Max) @ Id
- 4.5V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Series
- STripFET™
- Rds On (Max) @ Id, Vgs
- 6.1Ohm @ 10A, 10V