Images are for reference only. See Product Specifications for product details
Vishay / Siliconix SIRA04DP-T1-GE3
MOSFET N-CH 30V 40A PPAK SO-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 2385
- Description
- MOSFET N-CH 30V 40A PPAK SO-8
Product Details
- Series
- STripFET™ F6
- Rds On (Max) @ Id, Vgs
- 15mOhm @ 3A, 10V
- FET Type
- P-Channel
- Power Dissipation (Max)
- 2.7W (Ta)
- Packaging
- Digi-Reel®
- Supplier Device Package
- 8-SO
- Vgs (Max)
- ±20V
- Gate Charge (Qg) (Max) @ Vgs
- 34nC @ 4.5V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 40V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 3525pF @ 25V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 10A (Ta)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Base Part Number
- STS10
- Vgs(th) (Max) @ Id
- 1V @ 250µA (Min)
- Operating Temperature
- 150°C (TJ)