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Vishay / Siliconix SIRA06DP-T1-GE3
MOSFET N-CH 30V 40A PPAK SO-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 556
Product Details
- Rds On (Max) @ Id, Vgs
- 8.5mOhm @ 10A, 10V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 2.5W (Ta), 4.4W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 8-SO
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 60nC @ 10V
- Vgs (Max)
- ±16V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2635pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 17A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)