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Vishay / Siliconix SIRA10BDP-T1-GE3
MOSFET N-CHAN 30V
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.82
- Stock
- 100
- Description
- MOSFET N-CHAN 30V
Product Details
- Series
- -
- Power Dissipation (Max)
- 1.1W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- TSMT8
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 6.8nC @ 5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 440pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 7.5A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-SMD, Flat Lead
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 17mOhm @ 7.5A, 10V