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Vishay / Siliconix SIRA12BDP-T1-GE3

MOSFET N-CHAN 30V

Manufacturer
Vishay / Siliconix
Datasheet
Price
0
Stock
50
Description
MOSFET N-CHAN 30V

Product Details

Package / Case
PowerPAK® 1212-8
Vgs(th) (Max) @ Id
2.4V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
3.25mOhm @ 10A, 10V
Series
TrenchFET® Gen IV
Power Dissipation (Max)
3.7W (Ta), 52W (Tc)
FET Type
N-Channel
Supplier Device Package
PowerPAK® 1212-8
Packaging
Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs
50nC @ 10V
Vgs (Max)
+20V, -16V
Drain to Source Voltage (Vdss)
40V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
2530pF @ 20V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
25.4A (Ta), 94A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Mounting Type
Surface Mount