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Vishay / Siliconix SIRA12DP-T1-GE3
MOSFET N-CH 30V 25A PPAK SO-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 2222
Product Details
- Vgs(th) (Max) @ Id
- 2.3V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 10.5mOhm @ 10A, 10V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 3.5W (Ta), 27.7W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PowerPAK® 1212-8
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 22nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 25V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 855pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 16A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® 1212-8