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Vishay / Siliconix SIRA18DP-T1-GE3
MOSFET N-CH 30V 33A PPAK SO-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 5079
- Description
- MOSFET N-CH 30V 33A PPAK SO-8
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 102mOhm @ 2.7A, 4.5V
- Series
- -
- Power Dissipation (Max)
- 485mW (Ta), 6.25W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- 6-HUSON-EP (2x2)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 8.6nC @ 4.5V
- Vgs (Max)
- ±12V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 550pF @ 10V
- FET Feature
- Schottky Diode (Isolated)
- Current - Continuous Drain (Id) @ 25°C
- 2.7A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- 6-UDFN Exposed Pad
- Vgs(th) (Max) @ Id
- 1V @ 250µA