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Vishay / Siliconix SIRA36DP-T1-GE3
MOSFET N-CH 30V 40A PPAK SO-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.58
- Stock
- 541
- Description
- MOSFET N-CH 30V 40A PPAK SO-8
Product Details
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 80nC @ 10V
- Vgs (Max)
- ±12V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2240pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- -
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 4-UFBGA
- Vgs(th) (Max) @ Id
- 1.2V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 31mOhm @ 2A, 10V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 1.1W (Ta), 2.7W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- 4-Microfoot