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Vishay / Siliconix SIRA58ADP-T1-RE3
MOSFET N-CH 40V
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 7
- Description
- MOSFET N-CH 40V
Product Details
- Base Part Number
- STDLE
- Vgs(th) (Max) @ Id
- 4.5V @ 50µA
- Operating Temperature
- 150°C (TJ)
- Series
- -
- Rds On (Max) @ Id, Vgs
- 3.6Ohm @ 1.1A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 45W (Tc)
- Packaging
- Tape & Reel (TR)
- Supplier Device Package
- DPAK
- Vgs (Max)
- ±30V
- Gate Charge (Qg) (Max) @ Vgs
- 15.5nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 620V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 350pF @ 50V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 3A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63