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Vishay / Siliconix SIS108DN-T1-GE3
MOSFET N-CH 80V PPAK 1212-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 50
- Description
- MOSFET N-CH 80V PPAK 1212-8
Product Details
- Rds On (Max) @ Id, Vgs
- 27.5mOhm @ 7.5A, 10V
- Power Dissipation (Max)
- 3.8W (Ta), 24W (Tc)
- Series
- Automotive, AEC-Q101
- Supplier Device Package
- 4-LFPAK
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 5.8nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 330pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 8.5A (Ta), 21A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-1023, 4-LFPAK
- Vgs(th) (Max) @ Id
- 2V @ 13µA
- Operating Temperature
- -55°C ~ 175°C (TJ)