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Vishay / Siliconix SIS412DN-T1-GE3
MOSFET N-CH 30V 12A 1212-8 PPAK
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 52384
- Description
- MOSFET N-CH 30V 12A 1212-8 PPAK
Product Details
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 45mOhm @ 5A, 10V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 4.2W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- 8-SO
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 38nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 40V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 970pF @ 20V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 7.2A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)