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Vishay / Siliconix SIS426DN-T1-GE3
MOSFET N-CH 20V 35A 1212-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
- Description
- MOSFET N-CH 20V 35A 1212-8
Product Details
- Series
- TrenchFET®
- Power Dissipation (Max)
- 3.6W (Ta), 7.8W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 8-SO
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 54nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 75V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2100pF @ 38V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 20.5A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 9.8mOhm @ 13.8A, 10V