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Vishay / Siliconix SIS435DNT-T1-GE3
MOSFET P-CH 20V 30A 1212-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 3653
- Description
- MOSFET P-CH 20V 30A 1212-8
Product Details
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 8.4nC @ 5V
- Vgs (Max)
- ±10V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 400pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 2.7A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4V, 5V
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 200mOhm @ 1.6A, 5V
- Series
- -
- Power Dissipation (Max)
- 2W (Ta), 3.1W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- SOT-223