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Vishay / Siliconix SIS488DN-T1-GE3
MOSFET N-CH 40V 40A 1212-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 640
Product Details
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 190V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1100pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 7.5A (Tc)
- Part Status
- Not For New Designs
- Drive Voltage (Max Rds On, Min Rds On)
- 4V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 336mOhm @ 3.8A, 10V
- Series
- -
- Power Dissipation (Max)
- 850mW (Ta), 20W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- CPT3
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 30nC @ 10V