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Vishay / Siliconix SIS612EDNT-T1-GE3
MOSFET N-CH 20V 50A SMT
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
- Description
- MOSFET N-CH 20V 50A SMT
Product Details
- FET Feature
- -
- Part Status
- Obsolete
- Mounting Type
- Surface Mount
- Vgs(th) (Max) @ Id
- 1.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Power Dissipation (Max)
- 26W (Tc)
- Supplier Device Package
- 8-MLP (3.3x3.3)
- Gate Charge (Qg) (Max) @ Vgs
- 74nC @ 10V
- Series
- PowerTrench®
- Drain to Source Voltage (Vdss)
- 20V
- FET Type
- P-Channel
- Input Capacitance (Ciss) (Max) @ Vds
- 7995pF @ 10V
- Vgs (Max)
- ±12V
- Current - Continuous Drain (Id) @ 25°C
- 40A (Tc)
- Technology
- MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V