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Vishay / Siliconix SIS626DN-T1-GE3
MOSFET N-CH 25V 16A POWERPAK1212
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
- Description
- MOSFET N-CH 25V 16A POWERPAK1212
Product Details
- Vgs(th) (Max) @ Id
- 2.2V @ 250µA
- Operating Temperature
- -50°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 5mOhm @ 10A, 10V
- Series
- -
- Power Dissipation (Max)
- 52W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PowerPAK® 1212-8
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 42.5nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1390pF @ 15V
- FET Feature
- Schottky Diode (Body)
- Current - Continuous Drain (Id) @ 25°C
- 35A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® 1212-8