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Vishay / Siliconix SIS698DN-T1-GE3
MOSFET N-CH 100V 6.9A 1212-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- MOSFET N-CH 100V 6.9A 1212-8
Product Details
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 59nC @ 8V
- Vgs (Max)
- ±10V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2760pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 18A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- 8-TSSOP (0.173", 4.40mm Width)
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 16mOhm @ 4.5A, 4.5V
- Series
- -
- Power Dissipation (Max)
- 1.3W (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- 8-TSSOP