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Vishay / Siliconix SIS862DN-T1-GE3
MOSFET N-CH 60V 40A 1212
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 8500
- Description
- MOSFET N-CH 60V 40A 1212
Product Details
- FET Type
- P-Channel
- Supplier Device Package
- PG-TO252-3
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 33nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 860pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 18.6A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 130mOhm @ 13.2A, 10V
- Series
- SIPMOS®
- Power Dissipation (Max)
- 80W (Tc)