Vishay / Siliconix SIS892ADN-T1-GE3

Product Details

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

26nC @ 5V

Vgs (Max)

±5V

Drain to Source Voltage (Vdss)

8V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1640pF @ 4V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

11.7A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Mounting Type

Surface Mount

Package / Case

4-XFBGA, CSPBGA

Vgs(th) (Max) @ Id

800mV @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

35mOhm @ 1A, 4.5V

Series

TrenchFET®

Power Dissipation (Max)

2.77W (Ta), 6.25W (Tc)

FET Type

P-Channel

Supplier Device Package

4-Microfoot