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Vishay / Siliconix SIS892DN-T1-GE3
MOSFET N-CH 100V 30A 1212-8 PPAK
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 2031
- Description
- MOSFET N-CH 100V 30A 1212-8 PPAK
Product Details
- Series
- STripFET™ H6
- Rds On (Max) @ Id, Vgs
- 30mOhm @ 3A, 10V
- FET Type
- P-Channel
- Power Dissipation (Max)
- 2.9W (Tc)
- Packaging
- Digi-Reel®
- Supplier Device Package
- PowerFlat™ (3.3x3.3)
- Vgs (Max)
- ±20V
- Gate Charge (Qg) (Max) @ Vgs
- 12nC @ 4.5V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 30V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 1450pF @ 25V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 6A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Package / Case
- 8-PowerVDFN
- Base Part Number
- STL6
- Vgs(th) (Max) @ Id
- 1V @ 250µA (Min)
- Operating Temperature
- 150°C (TJ)