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Vishay / Siliconix SIS902DN-T1-GE3
MOSFET 2N-CH 75V 4A PPAK 1212-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
Product Details
- Rds On (Max) @ Id, Vgs
- 12mOhm @ 13.8A, 10V
- Series
- TrenchFET®
- Supplier Device Package
- 6-PowerPair™
- FET Type
- 2 N-Channel (Half Bridge)
- Gate Charge (Qg) (Max) @ Vgs
- 21nC @ 10V
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 30V
- FET Feature
- Logic Level Gate
- Input Capacitance (Ciss) (Max) @ Vds
- 790pF @ 15V
- Part Status
- Obsolete
- Current - Continuous Drain (Id) @ 25°C
- 16A
- Power - Max
- 27W, 30W
- Mounting Type
- Surface Mount
- Package / Case
- 6-PowerPair™
- Base Part Number
- SIZ702
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)