Images are for reference only. See Product Specifications for product details
Vishay / Siliconix SISA04DN-T1-GE3
MOSFET N-CH 30V 40A 1212-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.5
- Stock
- 100
Product Details
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 32A (Ta)
- Part Status
- Not For New Designs
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.9mOhm @ 32A, 10V
- Series
- -
- Power Dissipation (Max)
- 3W (Ta), 34.6W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 8-HSOP
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 42.8nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2850pF @ 15V