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Vishay / Siliconix SISA18ADN-T1-GE3
MOSFET N-CH 30V 38.3A 1212-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 17280
- Description
- MOSFET N-CH 30V 38.3A 1212-8
Product Details
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id
- 2.9V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 234mOhm @ 1.5A, 10V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 1.25W (Ta), 2.5W (Tc)
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 10.4nC @ 10V
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 100V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 190pF @ 50V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 2.3A (Tc)