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Vishay / Siliconix SISA40DN-T1-GE3
MOSFET N-CH 20V PPAK 1212-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- MOSFET N-CH 20V PPAK 1212-8
Product Details
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 26mOhm @ 5A, 4.5V
- Series
- -
- Power Dissipation (Max)
- 950mW (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- TSMT6 (SC-95)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 35nC @ 4.5V
- Vgs (Max)
- ±10V
- Drain to Source Voltage (Vdss)
- 12V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2850pF @ 6V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 5A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 1.5V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Vgs(th) (Max) @ Id
- 1V @ 1mA