Images are for reference only. See Product Specifications for product details
Vishay / Siliconix SISH110DN-T1-GE3
MOSFET N-CH 20V PPAK 1212-8SH
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 6050
- Description
- MOSFET N-CH 20V PPAK 1212-8SH
Product Details
- Series
- -
- Power Dissipation (Max)
- 35W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-252
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 31nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 40V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 22800pF @ 20V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 50A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 4.9mOhm @ 50A, 10V