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Vishay / Siliconix SISS26LDN-T1-GE3
MOSFET N-CH 60V 81.2A PP 1212-8S
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- MOSFET N-CH 60V 81.2A PP 1212-8S
Product Details
- Series
- Automotive, AEC-Q101
- Supplier Device Package
- 8-DFN (5x6) Dual Flag (SO8FL-Dual)
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 10nC @ 10V
- Packaging
- Tape & Reel (TR)
- Drain to Source Voltage (Vdss)
- 80V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 521pF @ 40V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 7A (Ta), 25A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 2V @ 26µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 25.5mOhm @ 10A, 10V
- Power Dissipation (Max)
- 3.2W (Ta), 38W (Tc)