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Vishay / Siliconix SISS40DN-T1-GE3
MOSFET N-CH 100V 36.5A PPAK 1212
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 5840
Product Details
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 200mA (Tj)
- FET Feature
- Depletion Mode
- Drive Voltage (Max Rds On, Min Rds On)
- 0V
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-243AA
- Vgs(th) (Max) @ Id
- -
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 12Ohm @ 150mA, 0V
- Series
- -
- Power Dissipation (Max)
- 1.6W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- TO-243AA (SOT-89)
- Packaging
- Tape & Reel (TR)
- Drain to Source Voltage (Vdss)
- 300V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 300pF @ 25V