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Vishay / Siliconix SISS65DN-T1-GE3
MOSFET P-CHAN 30V PPAK 1212-8S
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.89
- Stock
- 100
- Description
- MOSFET P-CHAN 30V PPAK 1212-8S
Product Details
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 9.2mOhm @ 6A, 10V
- Series
- Automotive, AEC-Q101, TrenchFET®
- Power Dissipation (Max)
- 45W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- PowerPAK® SO-8
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 100nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4900pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 30A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® SO-8
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA