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Vishay / Siliconix SIZ200DT-T1-GE3
MOSFET N-CH DUAL 30V
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
Product Details
- FET Feature
- Standard
- Current - Continuous Drain (Id) @ 25°C
- 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc)
- Part Status
- Active
- Power - Max
- 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerSMD, Flat Leads
- Vgs(th) (Max) @ Id
- 2.1V @ 250µA, 1.9V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
- Supplier Device Package
- 8-DFN (5x6)
- Series
- -
- Gate Charge (Qg) (Max) @ Vgs
- 20nC @ 10V, 52nC @ 10V
- FET Type
- 2 N-Channel (Dual) Asymmetrical
- Drain to Source Voltage (Vdss)
- 30V
- Packaging
- Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 820pF @ 15V, 2555pF @ 15V