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Vishay / Siliconix SIZ320DT-T1-GE3
MOSFET 2 N-CHANNEL 25V 8-POWER33
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 5860
Product Details
- Rds On (Max) @ Id, Vgs
- 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V
- Supplier Device Package
- 8-Power33 (3x3)
- Series
- TrenchFET® Gen IV
- Gate Charge (Qg) (Max) @ Vgs
- 6.9nC @ 10V, 11.3nC @ 10V
- FET Type
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 25V
- Packaging
- Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 325pF @ 10V, 600pF @ 10V
- FET Feature
- Standard
- Current - Continuous Drain (Id) @ 25°C
- 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
- Part Status
- Active
- Power - Max
- 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerWDFN
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)