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Vishay / Siliconix SIZ900DT-T1-GE3
MOSFET 2N-CH 30V 24A POWERPAIR
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 99
Product Details
- Rds On (Max) @ Id, Vgs
- 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V
- Supplier Device Package
- 8-PowerPair® (6x5)
- Series
- TrenchFET® Gen IV
- Gate Charge (Qg) (Max) @ Vgs
- 29nC @ 10V, 125nC @ 10V
- FET Type
- 2 N-Channel (Dual), Schottky
- Drain to Source Voltage (Vdss)
- 30V
- Packaging
- Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 1300pF @ 15V, 5230pF @ 15V
- FET Feature
- Standard
- Current - Continuous Drain (Id) @ 25°C
- 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)
- Part Status
- Active
- Power - Max
- 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerWDFN
- Vgs(th) (Max) @ Id
- 2.4V @ 250µA, 2.2V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)